A novel electrical measurement method of peak junction temperature based on the excessive thermotaxi

• 作 者: 朱阳军 苗庆海 张兴华 韩郑生
• 机 构: Institute of Microelectronics,Chinese Academy of Sciences,School of Physics,Shandong University,
• 出 处: 半导体学报
• 发表日期: 2009年09期
• 关键词: junction transistor technological designated currents instrument simply exact In

It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors.Based on the excessive thermotaxis effect of low current,a novel electrical measurement method of the peak junction temperature is presented in this paper.The method is called the thermal spectrum analysis method of transistors,simply designated TSA(thermal spectrum analysis method).Unlike the common method which uses a single measuring current,TSA uses multi-step currents to measure temperature-sensitive parameters.Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model,the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.

It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA (thermal spectrum analysis method) .Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature -sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.