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采用不同注量和注入顺序的MeV能量的P~+(3MeV,1×10~(14)～3×10~(14)cm~(-2))与MeV能量的Si~+(3MeV,1×10~(14)cm~(-2))共注入于SI-LEC GaAs晶体中。对不同退火条件的共注入样品的有源层电特性、载流子浓度分布、晶格的损伤和恢复状况以及剩余缺陷等进行了分析。研究表明,较大注量的P~+与Si~+共注入,可以降低注区薄层电阻,有效地提高MeV Si~+的激活效率,改善有源层迁移率,得到高品质的n~+埋层。共注入样品的HALL迁移率大于2400cm~2/(V·s),激活率可达95％以上。
(3MeV, 1 × 10 ~ (14) ~ 3 × 10 ~ (14) cm ~ 2) and MeV energy of Si ~ + (3MeV, 1 × 10 ~ (14) cm ~ (-2)) were implanted into SI-LEC GaAs crystals. The electrical properties of the active layer, the carrier concentration distribution, the damage and recovery of the lattice and the remaining defects of the co-implanted samples with different annealing conditions were analyzed. The results show that co-implantation of P ~ + with Si ~ + can decrease the sheet resistance, increase the activation efficiency of MeV Si ~ + effectively and improve the mobility of active layer, + Buried layer. The total HALL mobility of the samples was more than 2400cm ~ 2 / (V · s), and the activation rate could reach more than 95%.