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与其它光刻技术(尤其是超大规模多兆位存贮器光刻)相比,X射线光刻可给用户提供许多有利的条件。然而,许多可能的用户回避X射线光刻,他们等待着光学或电子束光刻满足亚微米的要求(对光学光刻至少0.5μm,电子束光刻至少0.1μm)。这种看法的部分依据是,相信X射线光刻在九十年代初期以前将不适用于生产使用。让我们仔细研究X射线的实际情况和它的潜在使用能力,一般认为X射线的特性包括为:
X-ray lithography offers users many advantages over other lithography techniques, especially in ultra-large multi-megabit memory lithography. However, many potential users shun X-ray lithography and they are waiting for the optical or electron beam lithography to meet submicron requirements (at least 0.5 μm for optical lithography and at least 0.1 μm for electron beam lithography). This view is based in part on the belief that X-ray lithography would not be suitable for production use until the early nineties. Let us carefully study the actual situation of X-ray and its potential to use, it is generally considered X-ray characteristics include: