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采用磁控溅射方法,以纯Si作为靶材,Ar和N_2为溅射气体在3 300 mm宽幅的玻璃基片上制备出大面积均匀的金黄色阳光控制膜。利用X射线衍射、X射线光电子能谱和椭偏仪对不同工艺参数下薄膜的结构、组成和光学参数进行了表征。结果表明:金黄色阳光控制膜的主要成分为富硅氮化硅相;溅射功率和溅射气体通过影响薄膜中硅/氮化硅含量比而改变薄膜的外观颜色。优化工艺条件下制备的金黄色阳光控制膜的色度指标为L*=62.4,a*=4.5,b*=31.6,遮阳系数可达0.59,具有良好的装饰和节能效果。
Using magnetron sputtering method, with pure Si as target material, Ar and N2 were sputtered gas to prepare a large area of uniform golden yellow sunlight control film on a 3 300 mm wide glass substrate. The structure, composition and optical parameters of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and ellipsometry. The results show that the main component of the golden sunlight control film is silicon-rich silicon nitride phase. The sputtering power and sputtering gas change the appearance color of the film by influencing the silicon / silicon nitride content in the film. The colorimetric index of the golden sunshine control film prepared under the optimized process conditions is L * = 62.4, a * = 4.5, b * = 31.6, and the shading coefficient can reach 0.59, which has good decorative and energy saving effects.