静电感应晶闸管（SITH）的理论分析

• 作 者: 李思渊 刘瑞喜 刘肃 杨建红 李成
• 机 构: 兰州大学
• 出 处: 半导体技术
• 发表日期: 1995年04期
• 关键词: SITH 静电感应晶闸管 栅压 电势分布 通态 理论分析 电子注入 势垒高度 作用机制 静电感应晶体管

首先对ＳＩＴＨ正向通态和阻断态的Ｉ－Ｖ特性给出了物理考察和解释。然后通过解析方法得到了ＳＩＴＨ沟道的电势分布，在此基础上，用有限差分法和迭代法求解了精确的沟道电势，得到了马鞍状的势分布，进而研究了沟道势垒随偏压的变化。发现栅压对沟道势垒的控制是直接而灵敏的，为栅极强迫关断提供了物理基础，所得结果可使我们对ＳＩＴＨ作用机制的理解更加清楚，同时为器件的设计制造提供了参考依据。

First of all, we give the physical investigation and explanation of I-V characteristics of SITH positive on-state and off-state. Then, the potential distribution of SITH channel is obtained by analytical method. On this basis, the accurate channel potential is solved by finite difference method and iterative method, and the saddle-like potential distribution is obtained. Then, Pressure changes. It is found that the gate voltage is directly and sensitive to the control of the channel barrier and provides the physical basis for the forced shutdown of the gate. The obtained results can make us understand the mechanism of SITH more clearly and provide a reference for the design and manufacture of the device in accordance with.