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目的探讨650nm半导体激光照射豚鼠视网膜后的细胞损伤情况。方法根据650nm半导体激光照射功率(2、3、4、5mW)将40只豚鼠分为4组,各组按照射次数(1、2次/d)分两个亚组,另取5只作为正常对照组。用TUNEL检测豚鼠视网膜细胞凋亡,用免疫组织化学法和医学图像分析法检测Fas蛋白的平均光密度值(AOD),用透射电镜观察视网膜细胞的形态学变化。结果不同照射功率组凋亡指数(AI)差异有统计学意义(P<0.05),其中2、3mW处理组与对照组AI无统计学差异(P>0.05),不同照射次数对AI影响无统计学意义(P>0.05);不同照射功率组间FasAOD有统计学差异(P<0.05),其中2mW处理组和对照组间FasAOD无统计学差异(P>0.05),不同照射次数对FasAOD无统计学差异(P>0.05);透射电镜观察,2mW处理组及对照组未见明显损伤反应;3mW处理组视网膜少许细胞变性,而在4mW和5mW处理组细胞变性明显增加。结论照射功率在3mW以上的豚鼠视网膜存在细胞凋亡,Fas蛋白的表达也存在异常,说明3mW以上的650nm半导体激光照射豚鼠视网膜存在损伤反应。
Objective To investigate the cell damage of guinea pig retina irradiated by 650nm semiconductor laser. Methods 40 guinea pigs were divided into 4 groups according to the power of 650nm semiconductor laser irradiation (2, 3, 4 and 5mW). Each group was divided into two subgroups according to the number of shots (1, 2 times / d), and the other 5 as normal Control group. The apoptosis of guinea pig retinal cells was detected by TUNEL. The average optical density (AOD) of Fas protein was detected by immunohistochemistry and medical image analysis. The morphological changes of retinal cells were observed by transmission electron microscopy. Results There were significant differences in apoptosis index (AI) between different irradiation power groups (P <0.05). There was no significant difference in AI between 2,3 mW group and control group (P> 0.05) (P> 0.05). There was a significant difference in FasAOD between different irradiation power groups (P <0.05). There was no significant difference in FasAOD between 2mW treatment group and control group (P> 0.05) (P> 0.05). Transmission electron microscopy showed no obvious injury response in 2mW and control groups. Some retinal cells degenerated in 3mW treatment group, while cell degeneration in 4mW and 5mW treatment groups increased significantly. Conclusion There is apoptosis in the retina of guinea pigs exposed to more than 3mW power and the expression of Fas protein is also abnormal. It indicates that there is damage reaction in guinea pig retina irradiated by 650nm semiconductor laser above 3mW.