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以金属Ag作为红外反射功能层的低辐射多层膜受热易产生团聚,严重损害导电性与低辐射性能。本文提出在金属Ag膜层中掺杂Ti元素,研究Ti掺杂对Ag基低辐射多层膜的团聚抑制作用以及对热处理后性能的影响。采用磁控溅射制备SiN_x/Ag/Si Nx与Si Nx/Ag-Ti(1.1 at%)/Si Nx多层膜,其中Ag(Ti)层厚度为20 nm,并进行真空与非真空热处理(大气环境)。通过对比有无Ti掺杂的Ag基多层膜热处理前后的背散射电子形貌、面电阻、辐射率与透光率,发现无论真空还是非真空热处理,Ti掺杂均显著提高Ag膜的热稳定性,抑制团聚的生成。热处理后的面电阻、辐射率与透光率均显著优于未掺杂Ag基多层膜。进一步,观察背散射电子形貌随热处理温度的变化,分析了无掺杂Ag膜团聚的形成过程,并推测了Ti掺杂对Ag膜团聚的抑制机理。
The low-emissivity multi-layer film with metal Ag as the infrared reflective functional layer tends to agglomerate due to heat, which seriously damages the conductivity and low radiation performance. In this paper, we propose to doping Ti into the metal Ag film to study the effect of Ti doping on the agglomeration inhibition of Ag-based low-emissivity multilayers and their effects on the properties after heat treatment. SiNx / Ag / Si Nx and Si Nx / Ag-Ti (1.1 at%) / Si Nx multilayers were prepared by magnetron sputtering. The thickness of the Ag (Ti) layer was 20 nm and vacuum and non- Atmospheric Environment). By comparing the backscattered electron morphology, surface resistance, emissivity and transmittance of Ti-doped Ag-based multilayer films before and after heat treatment, it was found that Ti doping significantly increases the heat of the Ag film whether vacuum or non-vacuum heat treatment Stability, inhibition of the formation of reunion. Surface resistance, emissivity and light transmittance after heat treatment were significantly better than undoped Ag-based multilayer films. Furthermore, the change of backscattered electron morphology with the heat treatment temperature was observed. The formation process of undoped Ag film was analyzed. The inhibition mechanism of Ti doping on Ag film agglomeration was also inferred.