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本文叙述一种用于剥离工艺的制备双层正性光刻胶结构的新工艺方法。此工艺方法的关键工序是在 CF_4等离子体中处理第一层光刻胶的表面以形成一薄的缓冲层,该层对紫外线是透明的,并且在光刻胶溶剂中和碱性水显影液中是不可溶的。选用 AZ-2400和 AZ-1300系列正性光刻胶制作出“凸缘”型光刻胶剖面图形以适合剥离应用。能很干净地剥离出高1μm、宽1μm 的铝线条。制作了一个1μm×1μm 的栅格结构以证实此新双层光刻胶工艺方法的分辨能力和钻蚀控制情况。最后叙述了1μm 栅 GaAs MES-FET 的制作以证实其应用。
This article describes a new process for preparing a double-layered positive photoresist structure for a lift-off process. The key process of this process is to treat the surface of the first layer of photoresist in a CF4 plasma to form a thin buffer layer that is transparent to UV light and neutralized in a photoresist solvent with an alkaline aqueous developer In the insoluble. Use AZ-2400 and AZ-1300 series of positive photoresist to produce a “flange” type of photoresist cross-sectional pattern for peeling applications. Can strip very high 1μm, 1μm wide aluminum lines. A 1μm × 1μm grid structure was fabricated to confirm the resolution and drilling control of this new double-layer photoresist process. Finally, the fabrication of a 1μm gate GaAs MES-FET is demonstrated to confirm its application.