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本文提出在离子注入GaAsMMIC内低噪声FET的制作中应考虑的问题。已鉴别出可能使FET性能恶化的工艺,并提出了一些解决方法。用这些方法制作的低噪声MMIC FET直到18GHz都显示出有良好的微波特性,并接近由类似的分立FET所能达到的性能。已制作出在18GHz下噪声系数为2.9dB、相关增益为6.1dB的0.8μm栅长MMIC FET,这些器件适于在离子注入GaAs MMIC中的低噪声应用。
This paper presents the issues to be considered in the fabrication of low-noise FETs in ion-implanted GaAs MMICs. Techniques that have been shown to degrade FET performance have been identified and some solutions have been proposed. The low noise MMIC FETs fabricated by these methods show good microwave performance up to 18 GHz and are close to the performance achievable by similar discrete FETs. 0.8-μm gate-length MMIC FETs with a 2.9-dB noise figure and 6.1 dB of gain-related gain at 18 GHz have been fabricated for low-noise applications in ion-implanted GaAs MMICs.