Optimization of BaMgAl_(10)O_(17):Eu~(2+) phosphors by the substitution of Si-N bonds for Al-O bonds

• 作 者: 王义飞 徐鑫 秦瀚 尹良君 郝绿原
• 机 构: Laboratory of Materials for Energy Conversion,Department of Materials Science and Engineering,Univer
• 出 处: Journal of Rare Earths
• 发表日期: 2010年S1期
• 关键词: ultraviolet bonds substitution excitation attributed incorporation luminescent p

We proposed a simple method to improve the thermal stability of BaMgAl10O17:Eu2+(BAM) phosphors by the substitution of Si-N bonds for Al-O bonds in the host lattice.Both photoluminescence properties and thermal stability under ultraviolet(UV) and vacuum ultraviolet(VUV) excitation could be significantly improved through Si-N incorporation.After thermal degradation at 600 °C for 1 h in air atmosphere,the Si-N doped sample(Ba0.88Eu0.12MgAl9.97Si0.03O16.97N0.03) had the highest emission intensity which was 22% and 40% stronger than that of as-received sample under UV and VUV excitation,respectively.This could be attributed to the stable local structure surrounding the Eu2+ ions and the lower electronegativity of nitrogen.

We propose a simple method to improve the thermal stability of BaMgAl10O17: Eu2 + (BAM) phosphors by the substitution of Si-N bonds for Al-O bonds in the host lattice. Blog photoluminescence properties and thermal stability under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation could be significantly improved through Si-N incorporation. After thermal degradation at 600 ° C for 1 h in air atmosphere, the Si-N doped sample (Ba0.88Eu0.12MgAl9.97Si0.03O16.97N0.03) had the highest emission intensity which was 22% and 40% stronger than that of as-received sample under UV and VUV excitation, .This could be attributed to the stable local structure surrounding the Eu2 + ions and the lower electronegativity of nitrogen.