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室温下分别采用40,160和1550 keV的He离子注入单晶Si样品到相同的剂量5×1016cm-2,部分经He注入过的样品然后再分别接受高密度H等离子体处理.利用透射电子显微镜分析比较了随后800℃高温退火引起的空腔形成.结果表明,附加的H等离子体处理对空腔生长所产生的效应明显地依赖于He离子的能量.对于40 keV He离子注入,空腔的形成和热生长似乎不受H等离子体处理的影响,而对于160 keV He离子注入,附加的等离子体处理则促进了空腔的生长并伴随着空腔分布区域的变窄.对于1550 keV He离子注入,H等离子体处理对空腔产生的效应介于40和160 keV注入情况之间.结合H等离子体处理在Si中所引起的缺陷的产生及其热演变过程对实验结果进行了讨论.
At room temperature, single crystal Si samples were implanted with He ions of 40, 160 and 1550 keV respectively to the same dose of 5 × 10 16 cm -2, and some of the implanted samples of He were then subjected to high-density H plasma treatment separately.Comparison of transmission electron microscopy Followed by high temperature annealing at 800 ° C. The results show that the effect of additional H plasma treatment on cavity growth is significantly dependent on the He ion energy.For the 40 keV He ion implantation the cavity formation and The thermal growth does not seem to be affected by the H plasma treatment, whereas for the 160 keV He ion implantation, additional plasma treatment promotes the growth of the cavity with the narrowing of the cavity distribution.For 1550 keV He ion implantation, The effect of H plasma treatment on the cavity was between 40 and 160 keV injection.The experimental results were discussed in conjunction with the generation of defects caused by H plasma treatment in Si and its thermal evolution.