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本文报导了电子、质子、X和Y射线辐照期间和辐照后加固MOS器件的恢复特怀。结果表明,复杂的恢复特性受被试元件的损伤灵敏度控制。结果还表明,损伤灵敏度取决于剂量率、总剂量、电源偏置、栅极偏置、晶体管类型、辐射源和粒子能量。如果没有相应的地面的试验和分析结果,这些依赖关系的复杂性质来解释在空间(暴露在电子和质子的整个光谱中)的LIS器件即或不是不可能的。性能也是十分困难的。某些情况下,n沟器件的阈值电压漂移可以在辐照后几小时之内完全恢复,这时具有的阈值电压平衡值大于辐照前的值。这个效应取决于总剂量,辐射源和暴露过程中的栅偏置电压。相比之下,p沟器件的阈值电压漂移在受辐射后30天内只能恢复20％。
This article reports the restoration of Telecoms hardened during the irradiation of electrons, protons, X and Y-rays, and after irradiation. The results show that the complex recovery characteristics are controlled by the damage sensitivity of the tested components. The results also show that damage sensitivity depends on dose rate, total dose, power bias, gate bias, transistor type, radiation source, and particle energy. Without the corresponding ground-based experimental and analytical results, it is possible or impossible to interpret the complex nature of these dependencies to account for LIS devices in space (exposed to the entire spectrum of electrons and protons). Performance is also very difficult. In some cases, the threshold voltage drift of an n-channel device can be fully restored within a few hours of irradiation when the threshold voltage balance is greater than before irradiation. This effect depends on the total dose, the source of the radiation, and the gate bias voltage during exposure. In contrast, the threshold voltage drift of p-channel devices can only recover 20% within 30 days of being irradiated.