东芝推出90nm嵌入式DRAM

• 作 者: 羽冬
• 出 处: 半导体信息
• 发表日期: 2003年03期
• 关键词: nm 生产功能 系列产品

虽然东芝与富士通合作开发90 nm/65 nm的SOC,但是该公司独立研制出90 nmSOC—TC300SOC。该系列产品采用东芝独立开发的CMOS4模块化工艺,开始采用铝互连,后改为铜互连。TC300SOC工艺的显著特点是可以迅速实现嵌入式DRAM。东芝可用纯逻辑及混合信号芯片同时生产功能齐全的eDRAM,从而推出品种更多的产品。由于这

Although Toshiba and Fujitsu have been working together to develop a 90 nm / 65 nm SOC, the company independently developed 90 nmSOC-TC300SOC. The series of products using Toshiba’s independently developed CMOS4 modular process, began using aluminum interconnects, later changed to copper interconnects. TC300SOC process is characterized by the rapid realization of embedded DRAM. Toshiba can produce full-featured eDRAMs simultaneously with pure logic and mixed-signal chips, resulting in the introduction of more products. Because of this