Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

• 作 者: 何宝华 杨仕娥 陈永生 卢景霄
• 机 构: Key Laboratory of Materials Physics,Education Ministry of China,College of Physics and Engineering,Z
• 出 处: Optoelectronics Letters
• 发表日期: 2011年03期
• 关键词: PECVD silane neutral crystalline mixtures crystallinity centration attributed am

We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.

We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon (μc-Si: H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition (PECVD). Under the typical μc-Si: H deposition conditions, the concentrations of the species in the plasma are calculated and the effects of silane fraction (SF = [SiH4] / [H2 + SiH4]) were investigated. The results show that SiH3 is the key precursor for μc-Si: H films growth, and other neutral radicals, such as Si2H5, Si2H4 and SiH2, may play some roles in the film deposition. If the silane fraction increases, the precursor concentration increases, but H atom concentration decreases rapidly, which results in the lower H / SiH3 ratio.