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采用脉冲激光沉积技术,在Si(111)衬底上成功制备出不同含量Na,Co共掺的ZnO薄膜.利用X射线衍射仪、原子力显微镜、荧光光谱仪以及四探针电阻率测试台对薄膜的结构、表面形貌和光电性质进行了表征.重点讨论了不同掺杂浓度对薄膜光电性质的影响.结果表明Na,Co共掺没有改变ZnO的六角纤锌矿结构且掺杂导致薄膜仅有的的紫外发光峰出现红移.当Na,Co掺杂浓度分别为10时,峰值最强且红移最明显,发光峰波长为397nm,薄膜的电阻率最低,达到了8.34×10-1Ω.cm.深入讨论了上述结果的产生原因.
Pulsed laser deposition technique was used to fabricate ZnO thin films with different content of Na and Co codoped on Si (111) substrate. The films were characterized by X-ray diffraction, atomic force microscopy, fluorescence spectroscopy and four-probe resistivity testers The effects of different doping concentration on the photoelectric properties of the films were discussed. The results show that the coextrusion of Na and Co does not change the hexagonal wurtzite structure of ZnO and the doping results in the only When the doping concentrations of Na and Co are 10, the peak value is the strongest and the redshift is the most obvious.The emission peak wavelength is 397nm, the resistivity of the film is the lowest, reaching 8.34 × 10-1Ω.cm Discussed in depth the reasons for the above results.