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设计了一种具有片上读出电路的集成超声传感器新结构，并用PI膜来垫高扩展栅电极。和典型POSFET结构相比，所制作样品的灵敏度提高14dB以上，带宽可达7MHz，满足超声传感器需要。
A new integrated ultrasonic sensor with on-chip readout circuit is designed and a PI film is used to pad the extended gate electrode. Compared with the typical POSFET structure, the sensitivity of the fabricated samples is increased by more than 14dB and the bandwidth is up to 7MHz, which meets the needs of ultrasonic sensors.