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A mode-locked(ML)picosecond ytterbium-doped thin disk laser using a monolayer Mo S2as the saturable absorber(SA)is demonstrated.The monolayer MoS_2 is fabricated through the method of low-pressure chemical vapor deposition.The laser directly produces stable ML picosecond pulses at a slope efficiency of 9.71%.The maximum output power is approximately 890 mW,while the corresponding repetition,pulse energy,and pulse duration are 48.6 MHz,18.3 nJ,and 13.1 ps,respectively.Results suggest that the monolayer MoS_2 is a promising SA for ultrafast lasers system.
A mode-locked (ML) picosecond ytterbium-doped thin disk laser using a monolayer Mo S2as the saturable absorber (SA) is demonstrated. The monolayer MoS_2 is fabricated through the method of low-pressure chemical vapor deposition. The laser directly produces stable ML picosecond pulses at a slope efficiency of 9.71%. The maximum output power is approximately 890 mW, while the corresponding repetition, pulse energy, and pulse duration are 48.6 MHz, 18.3 nJ, and 13.1 ps, respectively. Results suggest that the monolayer MoS_2 is a promising SA for ultrafast lasers system.