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利用气源分子束外延(GSMBE)技术,在InP(100)衬底上生长InAs量子点激光器。有源区包含5层InAs量子点,每层量子点的平均尺寸是2.9 nm和76 nm,面密度在1010cm-2左右,势垒层为InGaAsP。室温下量子点的光致发光中心波长在1.55μm,发光峰半高宽为108 meV。通过化学湿法腐蚀制备双沟道8μm宽脊条激光器,在20℃连续波工作模式下,腔长为0.7 mm的激光器的阈值电流为143 mA(2.5 kA/cm2),器件的激射中心波长在1.55μm。由于量子点尺寸的非均匀性,在大电流注入,激光器的激射谱展宽。器件单端面最大输出功率为27 mW,功率斜率效率为130 mW/A。
InAs quantum dot lasers were grown on InP (100) substrates by gas source molecular beam epitaxy (GSMBE). The active region contains five layers of InAs quantum dots, each of which has an average size of 2.9 nm and 76 nm, an areal density of about 1010 cm-2, and a barrier layer of InGaAsP. The photoluminescence center wavelength of quantum dots is 1.55μm at room temperature, and the half-width of emission peak is 108 meV. The double-channel 8μm wide ridge laser was fabricated by chemical wet etching. The threshold current of a laser with a cavity length of 0.7 mm was 143 mA (2.5 kA / cm2) at 20 ℃ in CW mode. The lasing center wavelength At 1.55 μm. Due to the nonuniformity of the size of the quantum dots, at high current injection, the lasing spectrum of the laser broadens. The maximum single output power of the device is 27 mW and the power slope efficiency is 130 mW / A.