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为了获得高品质的硼掺杂金刚石薄膜,采用直流热阴极化学气相沉积法在不同的温度下制备了硼掺杂金刚石薄膜。利用等离子体发射光谱、扫描电子显微镜、X射线衍射和Raman光谱研究了温度对硼掺杂金刚石薄膜生长特性的影响。研究发现:等离子体活性基团 C2的浓度随温度升高而增加。除了1080℃时生长的薄膜存在孔洞外,在较宽的温度范围(800～1000℃)都能够生长高质量的硼掺杂金刚石薄膜,并随温度升高薄膜质量和晶体结晶度都有所提高。与未掺杂生长的金刚石薄膜相比,掺硼薄膜即使在较低的温度(800℃)时也没有出现非金刚石相。这主要是因为掺杂剂B(OCH3)3 在气相反应中能够生成含氧活性基团,对非金刚石相具有很强的刻蚀作用。
In order to obtain high-quality boron-doped diamond films, boron-doped diamond films were prepared at different temperatures by DC hot-cathode chemical vapor deposition. The effects of temperature on the growth characteristics of boron-doped diamond films were investigated by plasma emission spectroscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy. It was found that the plasma reactive group C2 concentration increased with increasing temperature. In addition to the presence of voids in the films grown at 1080 ° C, high quality boron-doped diamond films can be grown over a wide temperature range (800-1000 ° C) and the film quality and crystallinity increased with increasing temperature . Compared with the undoped diamond film, the boron-doped film did not appear non-diamond phase even at lower temperature (800 ℃). This is mainly because the dopant B (OCH3) 3 can generate oxygen-containing active groups in the gas phase reaction and has a strong etching effect on the non-diamond phase.