A charge allocating model for the breakdown voltage calculation and optimization of the lateral RESU

• 作 者: 李小刚 冯志成 张正元 胡明雨
• 机 构: No.24 Research Institute of China Electronics Technology Group Corporation,National Laboratory of An
• 出 处: 半导体学报
• 发表日期: 2009年03期
• 关键词: breakdown junction doping charges predicting clearly illustrated depletion simpl

A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF(reduced surface field) structure.It agrees well with the results of numerical simulation on predicting the breakdown voltage.Compared with the latest published analytical model,this model has a better accuracy according to the numerical simulation with simpler form.The optimal doping concentration(per unit area) of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others.Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.

A new quite simple analytical model based on the charge allocating approach has been to describe the breakdown property of the RESURF (reduced surface field) structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. the optimal doping concentration (per unit area) of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.