论文部分内容阅读
High rate (＞ 50 μm/h) growth of homoepitaxial single-crystal diamond (SCD) is carried out by microwave plasma chemical vapour deposition (MPCVD) with added nitrogen in the reactant gases of methane and hydrogen,using a polycrystalline-CVD-diamond-film-made seed holder. Photoluminescence results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale,either on the top surface or in the bulk of those as-grown SCDs.The presence of N-distribution is attributed to the facts: (I) a difference in N-incorporation efficiency and (ii) N-diffusion,resulting from the local growth temperatures changed during the high-rate deposition process.In addition,the formed nitrogen-vacancy centres play a crucial role in N-diffusion through the growing crystal.Based on the N-distribution observed in the as-grown crystals,we propose a simple method to distinguish natural diamonds and man-made CVD SCDs.Finally,the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.