【摘 要】
：
Two silicon light emitting devices with different structures are realized in standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. They o
【机 构】
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State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science
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Two silicon light emitting devices with different structures are realized in standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be tued on at 8.3 V. Output optical powers of 13.6nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/cm2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.
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