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一、前言随着半导体大舰模集成电路的飞速发展,使之半导体MOS存貯器已成为存貯元件的主流。许多单位正在研究和使用各种形式的MOS存貯器。为了设计出高性能、高可靠的存貯系统,必须准确的了解和正确掌握MOS存貯器的各种参数特性及变化规律。为此,应对MOS存貯器的特性作深入细致的研究。这种研究可分为直流特性和容限特性等的电气特性研究与环境试验和寿命试验等的可靠性研究两种。我们着重讨论前种:可靠性研究正在进行之中。
I. INTRODUCTION With the rapid development of integrated circuits for semiconductors and shipbuilding, the semiconductor MOS memory has become the mainstream of storage components. Many units are studying and using various forms of MOS memory. In order to design a high-performance, highly reliable storage system, it is necessary to accurately understand and correctly understand the characteristics and variations of various parameters of the MOS memory. To this end, MOS memory should be carried out in-depth study of the characteristics of. This study can be divided into DC characteristics and tolerance characteristics of electrical characteristics such as research and environmental testing and life test reliability study two. We focus on the first species: reliability studies are ongoing.