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运用热蒸发技术在Si(111)和Si(100)基片上制备了ZnO纳米棒。SEM表征显示,ZnO纳米棒的直径约100nm,长度均匀,大约3μm;XRD表征发现ZnO纳米棒沿[0001]晶向择优生长。通过实验结果与理论分析得出:对于Si(111)基片上的样品,大部分ZnO纳米棒沿6个对称方向生长,而且与基片之间的夹角为54.7°,ZnO与Si(111)的外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[141]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[411]Si,或[0001]ZnO‖[4]Si。对于Si(100)基片上的样品,大部分ZnO纳米棒沿4个对称方向生长,与基片之间的夹角为70.5°,其外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[14]Si,或[0001]ZnO‖[14]Si。通过比较分析得出Si基片可以控制ZnO纳米棒的生长方向。
ZnO nanorods were prepared on Si (111) and Si (100) substrates by thermal evaporation. SEM characterization showed that ZnO nanorods were about 100 nm in diameter and about 3 μm in length. XRD indicated that ZnO nanorods were preferentially grown in the [0001] orientation. The experimental results and theoretical analysis show that for the samples on Si (111) substrate, most of the ZnO nanorods grow in six symmetrical directions with an angle of 54.7 ° to the substrate. The ZnO and Si (111) ZnO] [114] Si, [0001] ZnO “[4] Si, [0001] ZnO” [141] Si, [0001] ZnO “[4] Si, [0001] ] ”ZnO“ [411] Si or [0001] ZnO ”[4“] Si. For the samples on the Si (100) substrate, the majority of ZnO nanorods grow in four symmetrical directions with an angle of 70.5 ° to the substrate and the epitaxial relationship is [0001] ZnO ”[114] Si, [0001] ] “ZnO” [Si4] Si, [0001] ZnO “[1” 4] Si, or “0001” ZnO "[Si14] Si. Through comparative analysis, the Si substrate can control the growth direction of ZnO nanorods.