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四、光刻工艺 光刻是在硅片或金属铝表面涂光致抗蚀剂,通过精细图形掩模曝光、显影、腐蚀成所需的图形,用来作扩散窗口或元件互联。最近已采用改进型扫描电子显微镜用计算机控制电子束,对电子光致抗蚀剂曝光。x射线、远紫外光也可用来曝光。这些技术可以制造几何图形小于光学分辨几何图形的器件。 生产典型的双极型集成电路要进行埋层扩散,隔离扩散,基区和电阻扩散,电路元件引线孔,互联图形,在钝化层开压焊孔等共七次光刻。因为管芯很小(0.04～0.3平方英寸),元件尺寸精度为0.0001英寸(2.5μ),这要求
Fourth, Lithography Lithography is in the silicon or aluminum coated with a photoresist surface, through the fine graphics mask exposure, development, corrosion into the desired graphics, used to make the proliferation of windows or components interconnection. Recently, a modified scanning electron microscope has been used to electronically control electron beams to expose electronic photoresists. X-rays, far ultraviolet light can also be used for exposure. These technologies make devices with geometries smaller than optical resolution geometries. Typical bipolar integrated circuits are fabricated for a total of seven photolithographic exposures, such as buried diffusion, isolated diffusion, base diffusion and resistance diffusion, circuit element lead holes, interconnection patterns, and open holes in the passivation layer. Because die is very small (0.04 ~ 0.3 square inches), the component size accuracy of 0.0001 inches (2.5μ), which requires