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一、前言MOS器件的许多特性不但与它的几何尺寸和工艺参数有关,还与反型沟道中载流子的迁移率有关,例如跨导g_m、最高工作频率f_r等。因此测量和研究沟道迁移率对提高器件性能是非常有益的。本文根据沟道迁移率与电导的熟知关系,研制成一种沟道迁移率的模拟测量系统,用它能直接描绘出μ～V_G,μ～I_D关系曲线,因而为MOS器件沟道迁移率的测量与研究提供了一种得力工具。
I. INTRODUCTION Many features of MOS devices are not only related to their geometrical dimensions and process parameters, but also to the mobility of carriers in the inversion channel, such as transconductance g_m and maximum operating frequency f_r. Therefore, measuring and studying channel mobility is very beneficial for improving device performance. In this paper, based on the familiar relationship between channel mobility and conductance, an analog measurement system of channel mobility has been developed, which can directly describe the relationship curves of μ ~ V_G and μ ~ I_D, and thus measure the channel mobility of MOS devices And research provides an effective tool.