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一、序言 SIMOX技术(Se(?)oration by Implanted oxygem)是日本电信电话公社和武芷野电气通信研究所于1978年首先提出来的。近二、三年来已有非常引人注目地得到发展。用氧离子注入技术在体硅内形成SiO_2层,把它作为绝缘层衬底,直接用其上面的过渡层或者在其上面外延生长硅层来制作MOS,CMOS等有源器件,它兼有体硅和SOS器件的优点,可望在大规模、超大规模集成电路中得到发展。 本文着重介绍SIMOX技术,SIMOX-SiO_2层上的外延生长硅,SIMOX衬底的特性,以及在MOS场效应晶体管,CMOS电路等器件中的应用。
Preface SIMOX (Se (?) Oration by Implanted oxygem) was first proposed by the Japan Telegraph and Telephone Commune and the Wuzhihye Institute of Electric Communication in 1978. Nearly two or three years have been very noticeable to be developed. Oxygen ion implantation technology is used to form SiO 2 layer in bulk silicon, which is used as substrate of insulation layer, and the active layer of MOS, CMOS and other devices are directly fabricated by epitaxial growth of silicon layer on top of it. The advantages of silicon and SOS devices are expected to grow in large-scale, very large scale integrated circuits. This article focuses on the SIMOX technology, SIMOX-SiO2 layer epitaxial growth of silicon, SIMOX substrate characteristics, as well as MOS field-effect transistors, CMOS circuits and other devices.