Visible photoluminescence of porous silicon covered with an HfON dielectric layer

• 作 者: 蒋然 张燕
• 机 构: School of Physics,Shandong University,School of Information Science and Engineering,Shandong Univers
• 出 处: 半导体学报
• 发表日期: 2009年08期
• 关键词: dielectric porous annealing filling incorporation stoichiometric annealed termin

With HfON filling the holes in porous silicon (PS), films with improved photoluminescence (PL) at room temperature were prepared. A strong blue peak at 425 nm and a red peak at 690 nm were observed in PL spectra. It is believed that the quantum-limited effect (QLE) and the polycrystalline structure of HfON is responsible for the observed PL peaks. The stoichiometric proportion of N/O in the HfON layer has also a great influence on the intensity of blue light emission. Finally, the temperature quenching effect was observed to be greatly weakened for the incorporation of HfON.

With HfON filling the holes in porous silicon (PS), films with improved photoluminescence (PL) at room temperature were prepared. A strong blue peak at 425 nm and a red peak at 690 nm were observed in PL spectra. It is believed that the quantum-limited effect (QLE) and the polycrystalline structure of HfON is responsible for the observed PL peaks. The stoichiometric proportion of N / O in the HfON layer has also a great influence on the intensity of blue light emission. Finally, the temperature quenching effect was observed to be greatly weakened for the incorporation of HfON.