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基于0.5μm标准Biplor、互补金属氧化物半导体和双扩散金属氧化物工艺设计了两种不同结构不同尺寸的光电探测器,包括传统的P+/N-EPI/BN+结构光电探测器和多叉指P+/N-EPI/BN+结构的光电探测器.通过仿真优化设计了光电探测器的结构参量和性能,测试结果表明:多叉指状P+/NEPI/BN+光电探测器能够改善650nm的响应度以及降低结电容.选择该结构大面积P+/N-EPI/BN+光电探测器用于和跨阻放大器以及后端放大器的单片集成,采用0.5μm标准Biplor、互补金属氧化物半导体和双扩散金属氧化物工艺实现了一个用于650nm塑料光纤通信的单片集成光接收芯片.该光接收芯片的测试结果表明:对650nm的入射光,在160 Mb/s速率的伪随机二进制序列以及小于10-9的误码率条件下,光接收芯片的灵敏度为-15dBm,并能得到清晰的眼图.因此,本文设计的光电探测器可以很好地应用于宽带接入网中的高速塑料光纤通信系统的光接收芯片中.
Based on the 0.5μm standard Biplor, complementary metal oxide semiconductor and double diffused metal oxide process, two different photodetectors of different sizes and structures are designed, including the traditional P + / N-EPI / BN + structured photodetectors and multi-finger P + / N-EPI / BN + photodetector.The structure parameters and performance of the photodetector are designed by simulation and the results show that the multi-finger P + / NEPI / BN + photodetector can improve the responsivity of 650nm and reduce Junction Capacitors. The large-area P + / N-EPI / BN + photodetector of this structure was selected for monolithic integration with the transimpedance amplifier and the back-end amplifier using a 0.5μm standard Biplor, complementary metal oxide semiconductor and double diffused metal oxide process A monolithic integrated optical receiver chip for 650nm plastic optical fiber communication is realized.The test results of the optical receiver chip show that for the incident light at 650nm, the pseudo-random binary sequence at 160 Mb / s and the error less than 10-9 The sensitivity of the light-receiving chip is -15dBm under the bit-rate condition, and a clear eye diagram can be obtained.Therefore, the photodetector designed in this paper can be well applied to the high-speed plastic in the broadband access network Light receiving chip fiber communication system.