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采用溶胶–凝胶法,在不同气氛下退火制备了Co和Na共掺杂的ZnO稀磁性半导体Zn0.87Co0.10Na0.03O薄膜,并试图通过共掺Na来实现ZnO基稀磁半导体的p型转变,测试了薄膜样品的结构、发光性能、电性能和磁性能。研究了退火气氛对样品性能的影响。结果表明:样品具有ZnO的纤锌矿结构,且表现出明显的c轴(002)择优取向特征,未检测到与Co和Na有关的衍射峰。在室温,340 nm波长激发下,样品在379～387 nm附近出现了1个窄的紫外发射谱带;在可见光区出现了1个宽的发射谱带(450～600 nm)。共掺Na未能实现样品的p型转变;样品的电子载流子浓度随退火气氛中氧气流量的减小而降低。富氧退火条件下获得的样品具有明显的室温铁磁性,其饱和磁化强度随氧气流量的减小急剧下降;而缺氧退火条件下获得的样品的铁磁性消失,出现反铁磁性。
The Co-doped and Co-doped ZnO thin films of Zn0.87Co0.10Na0.03O ZnO thin films were prepared by sol-gel method and annealed in different atmospheres. The p-type ZnO thin-film magnetic semiconductors were co-doped with Na The structure, luminescent properties, electrical properties and magnetic properties of the films were tested. The effect of annealing atmosphere on the properties of the samples was investigated. The results show that the sample has the wurtzite structure of ZnO and shows the preferred c-axis (002) preferred orientation characteristic. The diffraction peaks associated with Co and Na are not detected. At room temperature, a narrow UV emission band appeared near 379 ~ 387 nm at 340 nm and a broad emission band (450 ~ 600 nm) appeared in the visible region. Co-doped Na failed to achieve p-type conversion of the sample; the electron carrier concentration of the sample decreases with decreasing oxygen flow rate in the annealing atmosphere. The sample obtained under oxygen-rich annealing has obvious room-temperature ferromagnetism, its saturation magnetization sharply decreases with the decrease of oxygen flow rate, while the sample obtained under anoxic annealing disappears and antiferromagnetism appears.