论文部分内容阅读
据日本《电子材料》1992年第1期报道。日本松下技研和松下电器产业半导体研究中心率先用超高真空扫描隧道显微镜测量硅表面的初期氧化过程的情况和原子顺序的凹凸形状,并为研制高速MOSFET奠定了基础。 首先。在超高真空的隧道显微镜内插入硅片试件,加热,除去硅表面的氧化膜,然后观察清洁的表面。其后,若在硅表面喷射微量的氧,表面发生稍稍变化(初期氧化过程),并与氧化前同一地方的试件作比较。观察结果已搞清氧化是由叫做C形缺陷的特殊缺陷开始的。接着,先将
According to Japan’s “Electronic Materials” reported in 1992 first issue. Japan’s Matsushita Techno and Matsushita Electric Industrial Semiconductor Research Center pioneered the use of ultra-high vacuum scanning tunneling microscope to measure the initial surface oxidation of silicon and the atomic order of asperity shape, and laid the foundation for the development of high-speed MOSFET. First of all. In the ultra-high vacuum tunnel microscope into the silicon specimen, heating, remove the oxide film on the silicon surface, and then observe the clean surface. Thereafter, a slight amount of oxygen was sprayed on the surface of the silicon to slightly change the surface (initial oxidation) and compare with the same sample before oxidation. The observation has been made that oxidation is initiated by a special defect called a C-shaped defect. Then, first