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提出了一种汽相生长GaAs/Ga_xIn_(1_x)As/GaAs的方法,当x≈0.85,顶层GaAs厚度为0.1～0.2μm时,迁移率仍然可达2000～3000cm~2/V·s,外延层的纵向掺杂分布陡峭。用该材料制得的异质结场效应晶体管显示出HEMT的性能,77K下未观察到持续光电导效应和I—V特性崩塌。
A method for vapor-phase growth of GaAs / Ga_xIn_ (1_x) As / GaAs is proposed. When the thickness of top GaAs is 0.1 ~ 0.2μm, the mobility can still reach 2000 ~ 3000cm ~ 2 / V · s when x≈0.85. The longitudinal doping of the layers is steep. Heterojunction field effect transistors made from this material exhibit the properties of HEMTs, no persistent photoconductivity at 77K and collapse of I-V properties.