用于光子晶体的多孔硅制备条件研究

• 作 者: 莫瑞海 刘洪利 张轩雄
• 机 构: 上海理工大学光电信息与计算机工程学院上海市现代光学系统重点实验室,中国科学院微电子研究所,
• 出 处: 半导体光电
• 发表日期: 2013年05期
• 关键词: 多孔硅 光子晶体 腐蚀溶液 腐蚀效率比 浓度条件 电压模式 孔径尺寸 腐蚀程度 腐蚀液 供电模式

利用扫描电镜观察了不同电压强度、腐蚀液浓度条件下制备的用于二维光子晶体的多孔硅的微观形貌。研究表明在恒压供电模式下更有利于硅基二维光子晶体的制备;随着腐蚀电压强度的增长,孔径和孔深都呈现增长的趋势,增长的幅度逐渐减小,腐蚀效率比的增长幅度也有逐渐变小的趋势;随着腐蚀溶液浓度的减小,腐蚀速率在降低,但腐蚀效率比在增大,虽然多孔硅的生长速度变慢,但是多孔硅的质量更好。

The microstructure of porous silicon for two-dimensional photonic crystals prepared under different voltage intensities and etching solution concentrations was observed by scanning electron microscopy. The results show that in the constant voltage power supply mode, the fabrication of two-dimensional photonic crystal is more beneficial to the fabrication of two-dimensional photonic crystal. With the increase of the corrosion voltage, the pore size and pore depth all show an increasing trend, the growth rate decreases and the corrosion efficiency ratio increases As the etching solution concentration decreases, the corrosion rate decreases, but the corrosion efficiency ratio increases. Although the growth rate of porous silicon is slower, the quality of porous silicon is better.