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本文采用阳极氧化剥层和微分电阻率技术,测定了磷在硅中高浓度扩散的浓度分布,观察到了磷浓度分布上的水平台、弯折和尾区等精细结构。采用滚槽染色法得出了结深与扩散时间平方根呈直线关系的结果,肯定了B-M分析用于处理高浓度磷在硅中的扩散的适用性。并应用B-M分析测定了磷在硅中依赖于浓度的扩散系数,观察到了扩散系数与电激活磷浓度之间三种不同的依赖关系。
In this paper, anodic oxidation delamination and differential resistivity techniques were used to determine the concentration distribution of phosphorus in high concentrations in silicon. Fine structures such as horizontal platform, bend and tail zone were observed for phosphorus concentration distribution. The results of a straight line relationship between the junction depth and the square root of the diffusion time were obtained by the grooved dyeing method. The applicability of the B-M analysis for the diffusion of high concentration phosphorus in silicon was confirmed. The concentration-dependent diffusion coefficient of phosphorus in silicon was determined by B-M analysis. Three different dependences between the diffusion coefficient and the electro-active phosphorus concentration were observed.