Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOS

• 作 者: 李劲 刘红侠 李斌 曹磊 袁博
• 机 构: Key Laboratory for Wide Bandgap Semiconductor Devices, Ministry of Education, School of Microelectro
• 出 处: Chinese Physics B
• 发表日期: 2010年10期
• 关键词: strained stack symmetrical drain exact resultant swing verified immunity SiGe

Based on the exact resultant solution of two-dimensional Poisson’s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.

Based on the exact resultant solution of two-dimensional Poisson’s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. models are verified by numerical simulation. the provision provides the basic development guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS) -based device in a nanoscale regime.