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用薄膜ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩＭｐｌａｎｔａｔｉｏｎｏｆＯＸｙｇｅｎ）、厚膜ＢＥＳＯＩ（ｆｆｅｎｄｉｎｇａｎｄＥｔｃｈ－ｂａｃｋＳｉｌｉｃｏｎＯｎＩｎｓｕｌａｔｏｒ）和体硅材料制备了ＣＭＯＳ倒相器电路，并用６０Ｃｏγ射线进行了总剂量辐照试验。在不同偏置条件下，经不同剂量辐照后，分别测量了ＰＭＯＳ、ＮＭＯＳ的亚阈特性曲线，分析了引起ＭＯＳＦＥＴ阈值电压漂移的两种因素（辐照诱生氧化层电荷和新生界面态电荷）。对ＮＭＯＳ／ＳＩＭＯＸ，由于寄生背沟ＭＯＳ结构的影响，经辐照后背沟漏电很快增大，经３００Ｇｙ（Ｓｉ）辐照后器件已失效。而厚膜ＢＥＳＯＩ器件由于顶层硅膜较厚，基本上没有背沟效应，其辐照特性优于体硅器件。最后讨论了提高薄膜ＳＩＭＯＸ器件抗辐照性能的几种措施。
A CMOS inverter circuit was fabricated by thin film SIMOX (Separation by IMplantation of Oxygen), thick film BESOI (ffending and Etch-back Silicon On Insulator) and bulk silicon. The total dose of 60Coγ-ray was used to measure the total dose. Under different bias conditions, the subthreshold characteristics of PMOS and NMOS were measured respectively after irradiation at different doses. Two factors that caused the threshold voltage drift of MOSFET were analyzed (irradiation-induced oxide charge and nascent interface charge ). For NMOS / SIMOX, due to the influence of the parasitic back-trench MOS structure, the back-drain leakage rapidly increases after irradiation, and the device has failed after being irradiated by 300Gy (Si). The thick film BESOI device due to the top of the silicon film is thick, basically no back groove effect, its irradiation superior to bulk silicon devices. Finally, several measures to improve the anti-radiation performance of thin film SIMOX devices are discussed.