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我厂生产的3DD15大功率晶体管,是采用铝或硼铝涂层扩散工艺进行深基区扩散.涂层扩散具有工艺操作简便、对设备系统要求较低、投量大等优点,适于大批量生产.但它也有一些缺点,其中之一就是表面合金问题.由于铝或硼铝源直接涂复在硅片表面上,在高温下硅片表面就不可避免地出现合金点.特别是在抛光不足的情况下,残存合金点将严重地影响管子的EB结成品率.另外,后道工序,尤其是光刻的质量对BV_(eb(?))也
I plant 3DD15 high-power transistor is the use of aluminum or boron-aluminum coating diffusion process for the proliferation of deep base area. Coating diffusion has the advantages of simple operation, low system requirements, large dosage, suitable for high-volume But it also has some shortcomings, one of which is the problem of surface alloy.Because aluminum or boron-aluminum source directly coated on the surface of the silicon wafer, the surface of the silicon alloy will inevitably appear at high temperature alloy point.Especially in the lack of polishing , The remaining alloy point will seriously affect the yield of the EB EB junction. In addition, the post-process, in particular the quality of lithography BV_ (eb (?))