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利用离子束辅助沉积技术制备TaN薄膜，并对其进行X射线衍射分析。掠入射的X射线衍射分析得出：离子束辅助沉积制备的TaN薄膜是面心立方结构，晶格常数a为0．4405nm。根据X射线衍射分析，用屈服强度表征的TaN薄膜的显微硬度为16～20GPa，与文献上报道的显微硬度值接近。离子束辅助沉积制备的TaN薄膜宏观内应力较小，且都为压应力。晶粒尺寸大约在10nm左右，随着注入离子能量的增加，薄膜晶粒尺寸有长大的趋势。
TaN thin films were prepared by ion beam assisted deposition technique and analyzed by X-ray diffraction. X-ray diffraction analysis of grazing incidence shows that the TaN film prepared by ion beam assisted deposition is a face-centered cubic structure with a lattice constant a of 0.4405 nm. According to X-ray diffraction analysis, the microhardness of TaN films characterized by yield strength is 16-20GPa, which is close to that reported in the literature. The TaN films prepared by ion beam assisted deposition have less macroscopic internal stress and are all compressive stress. The grain size is about 10nm. With the increase of energy of the implanted ions, the grain size of the film tends to grow.