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采用传统射频等离子体化学气相沉积技术在100—350℃的衬底温度下高速沉积氢化硅薄膜.傅里叶变换红外光谱和Raman谱的研究表明,纳米晶硅薄膜中的氢含量和硅氢键合模式与薄膜的晶化特性有密切关系,当薄膜从非晶相向晶相转变时,氢的含量减少了一半以上,硅氢键合模式以SiH2为主.随着衬底温度的升高和晶化率的增加,纳米晶硅薄膜中氢的含量以及其结构因子逐渐减少.
High-speed deposition of silicon hydride films at a substrate temperature of 100-350 ° C using conventional radio-frequency plasma chemical vapor deposition techniques has been demonstrated by Fourier Transform Infrared (FTIR) and Raman spectroscopy. The results show that the hydrogen content and silicon- The close mode is closely related to the crystallization characteristics of the films. When the film changes from the amorphous phase to the crystalline phase, the hydrogen content is reduced by more than half, and the SiH 2 bonding mode is dominated by SiH.sub.2 As the substrate temperature increases and With the increase of crystallization rate, the content of hydrogen in the nanocrystalline silicon film and its structure factor decrease gradually.