Forward gated-diode method for parameter extraction of MOSFETs

• 作 者: 张辰飞 马晨月 郭昕婕 张秀芳 何进 王国增 杨张 刘志伟
• 机 构: Peking University Shenzhen SOC Key Laboratory,PKU HKUST Shenzhen Institute,TSRC,Institute of Microel
• 出 处: 半导体学报
• 发表日期: 2011年02期
• 关键词: gated dielectric doping Forward recombination body drain 石卜 Fermi hardly

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs,especially when both of the variables are unknown previously.First,the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics.Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction.The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (RG) current are derived from the device physics. The peak RG current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate. excellent agreement with those extracted from the forward gated-diode method.