The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron block

• 作 者: 卢太平 李述体 张康 刘超 肖国伟 周玉刚 郑树文 尹以安 仵乐娟 王海龙 杨孝东
• 机 构: Institute of Opto-electronic Materials and Technology,South China Normal University,APT Electronics
• 出 处: Chinese Physics B
• 发表日期: 2011年09期
• 关键词: blocking attributed AlGaN leakage numerically illumination doping relaxation con

InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software.It is found that the structure with a p-AlInN electron blocking layer showes improved light output power,lower current leakage,and smaller efficiency droop.Based on numerical simulation and analysis,these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).

InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN / GaN multiple quantum wells (MQWs).