论文部分内容阅读
据报导,日本电气公司已研制成在12GHz的频率下噪声低达1.4dB、最大达1.6dB的GaAsFET,现在已开始市售。这种新的FET的噪声系数比以往的同类型器件的噪声要低0.3～0.4(标准值)dB。在日本电器试制过程中,有的FET的噪声低达1.2bB。为了降低
It has been reported that Nippon Electric Company has developed a GaAsFET with noise as low as 1.4dB and a maximum of 1.6dB at a frequency of 12GHz and is now on the market. The noise figure of this new FET is 0.3 to 0.4 (standard value) dB lower than the noise of conventional devices of the same type. In the Japanese electrical trial process, some FET noise as low as 1.2bB. To reduce