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谐振腔铟封接处漏气导致放电条件改变是氦氖激光陀螺失效的直接原因之一。针对阴极铝-铟封接界面,基于分子动力学方法,采用MEAM原子作用势,依据工艺温度与压力条件,模拟铝-铟界面原子扩散的物理过程,结果显示界面层原子以一定速率进行相互扩散,形成金属间化合物,直至扩散达到平衡;以5.0×1010应变率沿垂直界面方向对模型进行拉伸加载,得到了铝-铟界面模型在拉伸方向的应力-应变曲线,结果表明界面屈服强度低于相同尺寸的单晶铝和单晶铟,屈服应变介于铝、铟两种材料之间。相比于现有的研究成果,旨在为进一步优化谐振腔电极铟封工艺提供理论依据。
One of the direct causes of the failure of He-Ne laser gyroscope is the change of discharge conditions caused by the leakage of the indium seal at the cavity. For the cathode aluminum-indium sealing interface, based on the molecular dynamics method, using the MEAT atomic potential, the physical process of atom diffusion at the interface of aluminum-indium was simulated according to the process temperature and pressure conditions. The results show that interfacial layer atoms diffuse at a certain rate To form an intermetallic compound until the diffusion reaches equilibrium. The model is stretched and loaded along the vertical interface at a strain rate of 5.0 × 1010, and the stress-strain curve in the tensile direction of the aluminum-indium interface model is obtained. The results show that the interface yield strength Lower than the same size of single crystal aluminum and single crystal indium, yield strain between the two materials of aluminum and indium. Compared with the existing research results, this paper aims to provide a theoretical basis for further optimization of the indium-encapsulation process of the resonant electrode.