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采用直流磁控溅射方法在p型(100)Si基体上制备了不同相结构的W-Ti纳米晶薄膜阻挡层及其对应的Cu/W-Ti/Si复合膜,并对薄膜样品进行了退火热处理.用四探针电阻测试仪(FPP),XRD,AFM,XPS,FESEM,HRTEM等分析测试方法对不同相结构的薄膜样品退火前后的电阻特性和形貌进行了分析表征.实验结果表明,退火温度低于700℃时,薄膜基本上保持稳定;随着退火温度的增加,Cu与Ti反应生成CuTi3,同时Si与Cu发生互扩散形成高阻相Cu3Si,导致了表面粗糙度增加使方块电阻急剧增加.同时提出了Cu布线用W-Ti纳米晶薄膜扩散阻挡层退火过程中的失效机理.
W-Ti nanocrystalline thin films with different phase structures and their corresponding Cu / W-Ti / Si composite films were prepared by DC magnetron sputtering on p-type (100) Si substrates. Annealed and annealed.The electrical resistivity and morphology before and after annealing were measured by four-probe resistance tester (FPP), XRD, AFM, XPS, FESEM and HRTEM.The results show that , The film remained stable when the annealing temperature was lower than 700 ℃. With the increase of annealing temperature, CuTi3 was formed by reaction of Ti and Ti, while Si and Cu diffused to form high resistance phase Cu3Si, resulting in the increase of surface roughness, The resistance increases sharply.At the same time, the failure mechanism of W-Ti nanocrystalline thin film diffusion barrier annealing for Cu wiring is proposed.