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本文设计并制作了一种用于Ka波段分布式MEMS传输线(DMTL)移相器的MEMS电容式并联开关.通过理论计算和工程经验,大致定义了开关的结构尺寸.采用HFSS软件建立了开关的三维电磁场模型并优化了关键结构参数.仿真表明:开关在Ka波段插入损耗小于0.15 dB,回波损耗大于15 dB.采用CoventorWare软件进行了开关的机电耦合仿真,得出其驱动电压为2.1 V.为了满足流片单位表面微加工工艺的约束,对开关的设计版图和微加工工艺进行了多轮改进,得到初步的MEMS电容式并联开关工艺样品.单个MEMS开关的动态特性测试结果表明:施加36 V驱动电压时,微桥下拉的高度约为2μm.测得的36 V驱动电压与初始设计的2.1 V有较大的差异,原因在于限于流片单位的工艺约束,临时修改了结构设计,主要变化是增加了微桥的高度以及微桥(即上电极)与下电极之间的初始间距.
This paper designs and fabricates a MEMS capacitive shunt switch for the Ka-band distributed MEMS transmission line (DMTL) phase shifter. By theoretical calculation and engineering experience, the structural dimensions of the switch are roughly defined. The HFSS Dimensional electromagnetic field model and optimize the key structural parameters.The simulation results show that the insertion loss of the switch is less than 0.15 dB and the return loss is more than 15 dB in the Ka band.With CoventorWare software, the electromechanical coupling simulation of the switch is obtained. In order to meet the constraint of microfabrication process on the surface of flow sheet unit, the design layout and the micro-fabrication process of the switch were improved for many rounds to get the preliminary MEMS capacitive parallel switch process sample.The dynamic characteristic test results of a single MEMS switch showed that: V drive voltage, the micro-bridge pull-down height of about 2μm measured 36V drive voltage and the initial design of 2.1V have a greater difference due to the limited flow sheet unit process constraints, the temporary modification of the structural design, the main The change is to increase the height of the micro-bridge and the initial spacing between the micro-bridge (ie, the upper electrode) and the lower electrode.