Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering th

• 作 者: 周郁明 何怡刚 陆爱霞 万青
• 机 构: College of Physics and Microelectronic,Hunan University,College of Electrical and Information Engine
• 出 处: Chinese Physics B
• 发表日期: 2009年09期
• 关键词: transistor drain considering barriers termine have gated simulator Figure servin

The grain boundaries(GBs) have a strong effect on the electric properties of ZnO thin film transistors(TFTs).A novel grain boundary model was developed to analyse the effect.The model was characterized with different angles between the orientation of the grain boundary and the channel direction.The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle,so the degradation of the transistor characteristics increases.When a grain boundary is close to the drain edge,the potential barrier height reduces,so the electric properties were improved.

The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyze the effect. Model was characterized with different angles between the orientation of the grain boundary and the channel direction.The potential barriers formed by the grain boundary increase with the increase of the grain boundary angle, so the degradation of the transistor characteristic increases .When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.