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采用射频磁控溅射方法分别在蓝宝石(Al2O3)(0001)和硅(100)衬底上制备ZnO薄膜.通过X-光衍射测量与分析表明两者都沿C轴方向生长,在Al2O3衬底上的ZnO薄膜结晶质量优于在Si衬底上的薄膜样品.然而,由原子力显微镜观测发现在Al2O3衬底上的薄膜晶粒呈不规则形状,且有孔洞,致密性较差;而在Si衬底上的ZnO薄膜表面呈较规则的三维晶柱,致密性好.光致发光测量表明,不同衬底上生长的ZnO薄膜表现出明显不同的发光行为.
ZnO thin films were prepared by RF magnetron sputtering on sapphire (0001) and Si (100) substrates, respectively. Measurement and analysis by X-ray diffraction showed that both of them grew along the C-axis. On the ZnO film is better than the film on the Si substrate.However, observed by atomic force microscopy showed that the film on the Al2O3 substrate was irregular shape of the crystal grains, and have holes, the less dense; and Si The ZnO thin film on the substrate has a regular three-dimensional crystal column with good compactness, and the photoluminescence measurements show that the ZnO thin films grown on different substrates exhibit significantly different luminescence behavior.