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We propose a simple method to investigate the crystallization kinetics of amorphous In44Sb20 Te36 films on a nanosecond scale, based on local reflectivity measurements of the nanosecond laser-induced crystallization using a static tester. The pulse condition in terms of laser power and pulse width required for the onset of crystallization is established. Applying this pulse condition and Kissingers analysis, an activation energy of 0. 57 eV is estimated for the crystallization. This value deviates substantially from the activation energy determined at lower sample temperatures where crystallization proceeds in a time scale of seconds rather than nanoseconds.