红外电荷传输器件——硅探测器

• 作 者: 康立
• 出 处: 激光与红外
• 发表日期: 2004年期
• 关键词: 硅探测器 电荷传输 器件 红外 器件工艺 多路传输 量子效率 光电导 偏压 场效应晶体管

本文评述了红外电荷传输器件应用到系统的可能性。文章表明,器件工艺将给系统带来很大的影响。计算了量子效率、量子增益、频率响应、光电导增益、工作温度、噪声以及在硅探测器上加纵向与横向偏压之间的差别。列出了硅探测器性能表。研究了将探测器耦合到电荷传输多路传输器互连电路的方法,并给出了在低背景和高背景条件下,红外电荷传输器件探测器列阵的实例。

This article reviews the possibility of applying infrared charge-transfer devices to the system. The article shows that the device technology will have a great impact on the system. Quantum efficiency, quantum gain, frequency response, photoconductive gain, operating temperature, noise, and differences between vertical and horizontal bias applied to the silicon detector were calculated. The silicon detector performance charts are listed. A method of coupling the detector to the charge transfer multiplexer interconnection circuit is studied. An example of a detector array of an infrared charge transfer device under low background and high background conditions is given.