论文部分内容阅读
Ba0.6Sr0.4TiO3 (BST) thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% (E max = 200 kV/cm), 22.40 at 10 6 Hz, respectively.
Ba0.6Sr0.4TiO3 (BST) thin films with and without HfO2 buffer layer were fabricated on Pt / Ti / SiO2 / Si substrates by pulsed laser deposition. Dependences of HfO2 thickness on the dielectric property and leakage current of BST thin films were The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The leakage tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. based on the Schottky emission an improvement of the BST / Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% (E max = 200 kV / cm), 22.40 at 10 6 Hz, respectively.